The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Apr. 16, 2015
Applicants:

David J. Meyer, Fairfax, VA (US);

Brian P. Downey, Alexandria, VA (US);

Inventors:

David J. Meyer, Fairfax, VA (US);

Brian P. Downey, Alexandria, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00539 (2013.01); B81C 2201/0107 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0143 (2013.01); B81C 2201/0159 (2013.01); B81C 2201/0177 (2013.01);
Abstract

A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.


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