The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Nov. 20, 2013
Applicants:

Massachusetts Institute of Technology, Cambridge, MA (US);

Shirley Segal, Hasharon, IL;

Inventors:

Karen K. Gleason, Cambridge, MA (US);

Rong Yang, Cambridge, MA (US);

Yaron Segal, Cambridge, MA (US);

Tonio Buonassisi, Cambridge, MA (US);

Baby Reeja Jayan, Boston, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 1/00 (2006.01); H01L 31/18 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
B05D 1/60 (2013.01); H01L 21/02118 (2013.01); H01L 21/02271 (2013.01); H01L 31/1868 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11); Y10T 428/265 (2015.01);
Abstract

Embodiments described herein are related to methods for processing substrates such as silicon substrates. In some cases, the method may provide the ability to passivate a silicon surface at relatively low temperatures and/or in the absence of a solvent. Methods described herein may be useful in the fabrication of a wide range of devices, including electronic devices such as photovoltaic devices, solar cells, organic light-emitting diodes, sensors, and the like.


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