The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Sep. 16, 2013
Applicant:

Oregon Physics, Llc, Hillsboro, OR (US);

Inventors:

Noel S. Smith, Lake Oswego, OR (US);

Roderick W. Boswell, Canberra, AU;

Paul P. Tesch, Portland, OR (US);

Noel P. Martin, Hillsboro, OR (US);

Assignee:

OREGON PHYSICS, LLC, Hillsboro, OR (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); H05H 1/46 (2006.01); H01J 37/08 (2006.01); H01J 37/32 (2006.01); H01J 27/16 (2006.01); H01J 49/10 (2006.01); H01J 49/14 (2006.01);
U.S. Cl.
CPC ...
H05H 1/24 (2013.01); H01J 27/16 (2013.01); H01J 37/08 (2013.01); H01J 37/32082 (2013.01); H01J 49/105 (2013.01); H01J 49/142 (2013.01); H05H 1/46 (2013.01); H05H 2001/4667 (2013.01);
Abstract

In a plasma ion source having an induction coil adjacent to a reactor chamber for inductively coupling power into the plasma from a radio frequency power source and designed for negative and positive ion extraction, a method for operating the source according to the invention comprises providing radio frequency power to the induction coil with a RF amplifier operating with a variable frequency connected to a matching network mainly comprised of fixed value capacitors. In this device the impedance between the RF power source and the plasma ion source is matched by tuning the RF frequency rather than adjusting the capacitance of the matching network. An option to use a RF power source utilizing lateral diffused metal oxide semiconductor field effect transistor based amplifiers is disclosed.


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