The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Nov. 22, 2011
Falah Hosini, Sundbyberg, SE;
Madhan Mohan, Tamil Nadu, IN;
Siva Nagi Reddy Pamulapati, Andra Pradesh, IN;
Arnost Kopta, Zürich, CH;
Munaf Rahimo, Uezwil, CH;
Raffael Schnell, Seon, CH;
Ulrich Schlapbach, Liebefeld, CH;
Falah Hosini, Sundbyberg, SE;
Madhan Mohan, Tamil Nadu, IN;
Siva Nagi Reddy Pamulapati, Andra Pradesh, IN;
Arnost Kopta, Zürich, CH;
Munaf Rahimo, Uezwil, CH;
Raffael Schnell, Seon, CH;
Ulrich Schlapbach, Liebefeld, CH;
ABB SCHWEIZ AG, Baden, CH;
Abstract
A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level.