The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Mar. 23, 2016
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Wei-Chih Peng, Hsinchu, TW;
Jhih-Jheng Yang, Hsinchu, TW;
Victor Liu, Hsinchu, TW;
Hong-Yi Lei, Hsinchu, TW;
Min Hsun Hsieh, Hsinchu, TW;
Assignee:
Epistar Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/60 (2010.01); H01L 33/22 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/007 (2013.01); H01L 33/0095 (2013.01); H01L 33/22 (2013.01); H01L 33/0075 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0091 (2013.01);
Abstract
A method of manufacturing a light-emitting device comprises the steps of: providing a substrate; forming a mask block contacting the substrate and exposing a portion of the substrate; implanting an ion into the portion of the substrate to form an ion implantation region; and forming a semiconductor stack on the substrate such that multiple cavities are formed between the semiconductor stack and the ion implantation region; wherein the mask block comprises a material made of metal or oxide.