The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Jun. 02, 2014
Asahi Kasei E-materials Corporation, Tokyo, JP;
Fujito Yamaguchi, Tokyo, JP;
Nao Shirokura, Tokyo, JP;
ASAHI KASEI E-MATERIALS CORPORATION, Tokyo, JP;
Abstract
A semiconductor light emitting apparatus comprised of a semiconductor light emitting device () having a layered semiconductor layer () configured by layering at least two or more semiconductor layers (), () and a light emitting layer () to emit first light, and a wavelength conversion member that covers at least apart of the semiconductor light emitting device (), absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light, characterized in that the semiconductor light emitting device () is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in the out-of-plane direction on one of main surfaces forming the semiconductor light emitting device (), the fine structure layer forms a two-dimensional photonic crystal () controlled by at least one of a pitch among the dots, a dot diameter and a dot height, and that the two-dimensional photonic crystal () has at least two or more periods each of 1 μm or more.