The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Sep. 29, 2016
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Hiroaki Tamemoto, Anan, JP;

Ryota Taoka, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/786 (2006.01); B23K 26/50 (2014.01); B23K 26/53 (2014.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); B23K 26/00 (2014.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0095 (2013.01); B23K 26/0054 (2013.01); B23K 26/0057 (2013.01); H01L 21/786 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); B23K 2201/40 (2013.01);
Abstract

A method for manufacturing a semiconductor element includes providing a wafer having a sapphire substrate and a semiconductor stacked body disposed on the sapphire substrate, performing a first scanning of a portion of the sapphire substrate in which a laser beam is irradiated into an interior of the sapphire substrate, performing a second scanning of the portion of the sapphire substrate in which a laser beam is irradiated into the interior of the sapphire substrate, the second scanning occurring after the first scanning and before a void is produced in the interior of the sapphire substrate irradiated with the laser beam in the first scanning, and separating the wafer into a plurality of semiconductor elements.


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