The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Oct. 09, 2015
Applicant:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Inventors:
Zhenqiang Ma, Middleton, WI (US);
Jung-Hun Seo, Madison, WI (US);
Assignee:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/113 (2006.01); H01L 31/101 (2006.01); H01L 31/0232 (2014.01); H01L 31/0236 (2006.01); H01L 31/0224 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1136 (2013.01); H01L 31/0236 (2013.01); H01L 31/02327 (2013.01); H01L 31/022408 (2013.01); H01L 31/03921 (2013.01); H01L 31/03926 (2013.01); H01L 31/1013 (2013.01);
Abstract
MOSFET phototransistors, methods of operating the MOSFET phototransistors and methods of making the MOSFET phototransistors are provided. The phototransistors have a buried electrode configuration, which makes it possible to irradiate the entire surface areas of the radiation-receiving surfaces of the phototransistors.