The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Nov. 04, 2015
Applicants:

Alexander Dietrich Hölke, Sarawak, MY;

Deb Kumar Pal, Kolkata, IN;

Kia Yaw Kee, Sarawak, MY;

Yang Hao, Sarawak, MY;

Inventors:

Alexander Dietrich Hölke, Sarawak, MY;

Deb Kumar Pal, Kolkata, IN;

Kia Yaw Kee, Sarawak, MY;

Yang Hao, Sarawak, MY;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/868 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/868 (2013.01); H01L 29/405 (2013.01); H01L 29/407 (2013.01); H01L 29/8611 (2013.01);
Abstract

A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.


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