The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
May. 21, 2015
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Hee jun Yoo, Yongin-si, KR;
Sang Ho Park, Suwon-si, KR;
Joung-Keun Park, Asan-si, KR;
Ki Wan Ahn, Seoul, KR;
Joo Sun Yoon, Seoul, KR;
Seung Min Lee, Jeju-si, KR;
Yong Jae Jang, Seoul, KR;
Jae Hyuk Jang, Seongnam-si, KR;
Kwang Young Choi, Incheon, KR;
Jung Hyun Kim, Seoul, KR;
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Abstract
A thin film transistor including a substrate; a first gate electrode on the substrate; a first insulating layer covering the substrate and the first gate electrode; a semiconductor on the first insulating layer and overlapping the first gate electrode; a second insulating layer covering the first insulating layer and the semiconductor; a second gate electrode on the second insulating layer and crossing the first gate electrode in plane; a third insulating layer covering the second gate electrode and the second insulating layer; a first source electrode and a first drain electrode on the third insulating layer and connected to the semiconductor; and a second source electrode and a second drain electrode on a same layer as the first source electrode and the first drain electrode and connected to the semiconductor.