The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Jun. 19, 2015
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Chongqing Boe Optoelectronics Technology Co., Ltd., Chongqing, CN;

Inventors:

Wu Wang, Beijing, CN;

Haijun Qiu, Beijing, CN;

Fei Shang, Beijing, CN;

Guolei Wang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66757 (2013.01); H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01);
Abstract

The present disclosure relates to the field of display technology, and provides a TFT, its manufacturing method and a display device. A first region of an active layer of the TFT corresponding to a gap between a source electrode and a drain electrode includes a metallic oxide semiconductor layer and a silicon semiconductor layer arranged on the metallic oxide semiconductor layer. The source electrode and the drain electrode are directly lapped onto the active layer.


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