The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Jun. 15, 2015
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Globalfoundries Inc., Grand Cayman, KY;
Hsueh-Chung Chen, Cohoes, NY (US);
Su Chen Fan, Cohoes, NY (US);
Dong Kwon Kim, East Greenbush, NY (US);
Sean Lian, Cohoes, NY (US);
Fee Li Lie, Albany, NY (US);
Linus Jang, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
An aspect of the invention includes a freestanding spacer having a sub-lithographic dimension for a sidewall image transfer process. The freestanding spacer comprises: a first spacer layer having a first portion disposed on the semiconductor layer; and a second spacer layer having a first surface disposed on the first portion of the first spacer layer, wherein the first spacer layer has a first dielectric constant and the second spacer layer has a second dielectric constant, the first dielectric constant being greater than the second dielectric constant, and wherein a dimension of each of the first and second spacer layers collectively determine the sub-lithographic lateral dimension of the freestanding spacer.