The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Jul. 14, 2016
Excelliance Mos Corporation, Hsinchu County, TW;
Chu-Kuang Liu, Hsinchu County, TW;
Excellence MOS Corporation, Hsinchu County, TW;
Abstract
A method of fabricating a power metal oxide semiconductor field effect transistor (MOSFET) is provided, and the method includes forming a semiconductor layer on a substrate, forming at least one first trench in the semiconductor layer, forming a thermal oxide layer on a surface of the trench, forming a first gate in the first trench, forming a chemical vapor deposition (CVD) oxide layer on the first gate in the first trench, forming a mask layer on the CVD oxide layer in the first trench so as to form a second trench between the mask layer and the thermal oxide layer, and forming a second gate in the second trench.