The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Jun. 17, 2015
Ji Won Lee, Daegu, KR;
Seung Sik Kim, Hwaseong-si, KR;
Young Chan Kim, Seongnam-si, KR;
Tae Han Kim, Suwon-si, KR;
Eun Sub Shim, Anyang-si, KR;
Dong Joo Yang, Seongnam-si, KR;
Min Seok OH, Osan-si, KR;
Moo Sup Lim, Yongin-si, KR;
Ji Won Lee, Daegu, KR;
Seung Sik Kim, Hwaseong-si, KR;
Young Chan Kim, Seongnam-si, KR;
Tae Han Kim, Suwon-si, KR;
Eun Sub Shim, Anyang-si, KR;
Dong Joo Yang, Seongnam-si, KR;
Min Seok Oh, Osan-si, KR;
Moo Sup Lim, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.