The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Jul. 18, 2016
Boe Technology Group Co., Ltd., Beijing, CN;
Shuang Sun, Beijing, CN;
Jing Niu, Beijing, CN;
Fangzhen Zhang, Beijing, CN;
Zhijun Lv, Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Abstract
A preparation method of a poly-silicon thin film transistor (TFT) array substrate and an array substrate thereof are provided. The preparation method includes: forming a photoresist layer on a poly-silicon layer, and exposing and developing the photoresist layer with a gray tone mask to form patterns of a photoresist completely-reserved region, a photoresist partially-reserved regions and a photoresist completely-removed region; removing part of the poly-silicon layer located in the photoresist completely-removed region, to form patterns of active layers; ashing the photoresist so as to expose part of the active layer located in the photoresist partially-reserved regions and inject P+ ions of high concentration into the part of the active layer, to form doping regions of patterns of source-drain electrodes of a P-type TFT; and stripping off remaining photoresist.