The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Jul. 02, 2013
On-soi integrated circuit comprising a lateral diode for protection against electrostatic discharges
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Stmicroelectronics SA, Crolles, FR;
Claire Fenouillet-Beranger, Grenoble, FR;
Pascal Fonteneau, Theys, FR;
Commissariate a l'energie atomique et aux energies alternatives, Paris, FR;
STMicroelectronics SA, Montrouge, FR;
Abstract
An integrated circuit includes a transistor, an UTBOX buried insulating layer disposed under it and a ground plane disposed under the layer. A well is disposed under the plane and a first trench is at the periphery of the transistor and extends through the layer into the well. There is a substrate under the well and a p-n diode on a side of the transistor. The diode comprises first and second zones of opposite doping and the first zone is configured for electrical connection to a first electrode of the transistor. The first and second zones are coplanar with the plane and a second trench for separating the first and second zones. The second trench extends through the layer into the plane to a depth less than an interface between the plane and the well. There is a third zone under the second trench forming a junction between the zones.