The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Nov. 05, 2014
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Xin Yi Zhang, Cupertino, CA (US);

Xiaofeng Fan, Santa Clara, CA (US);

Junjun Li, San Jose, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 29/785 (2013.01);
Abstract

In an embodiment, an ESD protection circuit is provided in which diodes may be formed between N+ and P+ diffusions within an insulated semiconductor region and in which additional diodes may be formed between adjacent insulated regions of opposite conduction type as well. The diodes may be used in parallel to form an ESD protection circuit, which may have low on resistance and may sink high ESD current per unit area. To support the formation of the ESD protection circuit, each silicon region may have alternating N+ and P+ diffusions, and adjacent silicon regions may have N+ and P+ diffusions alternating in opposite locations. That is a perpendicular drawn between the N+ diffusions of one adjacent region may intersect P+ diffusions in the other adjacent region, and vice versa.


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