The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Mar. 25, 2013
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Takuo Funaya, Tokyo, JP;

Takayuki Igarashi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 27/06 (2006.01); H01L 21/66 (2006.01); H01L 21/3205 (2006.01); H01L 49/02 (2006.01); H01L 23/528 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 21/3205 (2013.01); H01L 22/32 (2013.01); H01L 24/06 (2013.01); H01L 24/49 (2013.01); H01L 27/06 (2013.01); H01L 27/0688 (2013.01); H01L 28/10 (2013.01); H01L 23/49575 (2013.01); H01L 23/528 (2013.01); H01L 23/5283 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/181 (2013.01);
Abstract

A coil CLis formed on a semiconductor substrate SB via a first insulation film, a second insulation film is formed so as to cover the first insulation film and the coil CL, and a pad PDis formed on the second insulation film. A laminated film LF having an opening OPfrom which the pad PDis partially exposed is formed on the second insulation film, and a coil CLis formed on the laminated insulation film. The coil CLis disposed above the coil CL, and the coil CLand the coil CLare magnetically coupled to each other. The laminated film LF is composed of a silicon oxide film LF, a silicon nitride film LFthereon, and a resin film LFthereon.


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