The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Dec. 12, 2014
Applicant:
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Inventors:
Joonhwa Bae, Yongin, KR;
Yoonho Khang, Yongin, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02675 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02691 (2013.01); H01L 27/1222 (2013.01); H01L 29/7866 (2013.01);
Abstract
A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate.