The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Apr. 15, 2014
Centre National DE LA Recherche Scientifique, Paris, FR;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Gregory Di Pendina, Echirolles, FR;
Abstract
The invention concerns a memory cell comprising first and second resistive elements () coupled respectively between first and second storage nodes and first and second intermediate nodes, at least one of them being programmable to take up one of at least two resistive states (Rmax); a third transistor () coupled between the first and second intermediate nodes; a fourth transistor () coupled between the first storage node () and a data input node (); and a control circuit arranged, during a write phase, to activate the third and fourth transistors and to couple the data input node to a second supply voltage (VDD, GND) via a first circuit block () in order to generate a current in a first direction through the first and second resistive elements in order to program the resistive state of at least one of the elements.