The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Dec. 15, 2014
Applicants:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Centre National DE LA Recherche Scientifique, Paris, FR;

Inventors:

Fabrice Bernard-Granger, Le Sappey en Chartreuse, FR;

Virgile Javerliac, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 8/16 (2006.01); G11C 11/56 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 8/16 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/5607 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

A multi-port memory cell including: first and second magnetoresistive elements, each of which is programmable so as to adopt at least two resistive states, in which: the first magnetoresistive element is coupled with a first output line and is programmable by the direction of a current which is passed through same; and the second magnetoresistive element is coupled with a second output line and is arranged so as to be magnetically coupled with the first magnetoresistive element, the second magnetoresistive element being programmable by a magnetic field generated by the first magnetoresistive element.


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