The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

May. 12, 2015
Applicants:

Taejoong Song, Seongnam-si, KR;

Jae-ho Park, Suwon-si, KR;

Sanghoon Baek, Seoul, KR;

Giyoung Yang, Seoul, KR;

Sang-kyu OH, Gwacheon-si, KR;

Hyosig Won, Suwon-si, KR;

Inventors:

Taejoong Song, Seongnam-si, KR;

Jae-Ho Park, Suwon-si, KR;

Sanghoon Baek, Seoul, KR;

Giyoung Yang, Seoul, KR;

Sang-Kyu Oh, Gwacheon-si, KR;

Hyosig Won, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5081 (2013.01); G06F 17/5072 (2013.01);
Abstract

A method of generating a photo mask for use during fabrication of a semiconductor device includes; generating an initial layout design including critical circuit paths and non-critical circuit paths by shielding all gate line patterns used to implement transistors in the critical circuits and non-critical circuits, and thereafter generating a layout design from the initial layout design by selectively un-shielding a non-critical gate line pattern among the gate line patterns used to implement a gate of a non-critical transistor in a non-critical circuit, while retaining the shielding of all critical gate line patterns among the gate line patterns.


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