The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Jan. 21, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Kyung-jin Kim, Uiwang-si, KR;

Ung-hwan Kim, Seongnam-si, KR;

Eun-cheol Kim, Seongnam-si, KR;

Jun-jin Kong, Yongin-si, KR;

Se-jin Lim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); H03M 13/37 (2006.01); H03M 13/11 (2006.01);
U.S. Cl.
CPC ...
H03M 13/3738 (2013.01); G06F 11/1048 (2013.01); H03M 13/3715 (2013.01); H03M 13/3746 (2013.01); H03M 13/1108 (2013.01); H03M 13/1111 (2013.01);
Abstract

A method of reading multi-bit data stored in a memory cell of a flash memory includes attempting to perform hard decision (HD) decoding on output data from the flash memory, and performing soft decision (SD) decoding on the output data when the HD decoding cannot be performed. The performing of the SD decoding includes: changing a maximum number of iterations according to a threshold voltage distribution of the memory cell; and performing the SD decoding based on the changed maximum number of iterations.


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