The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

May. 09, 2012
Applicants:

Sun Kyung Kim, Seoul, KR;

Hyun Kyong Cho, Seoul, KR;

Inventors:

Sun Kyung Kim, Seoul, KR;

Hyun Kyong Cho, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/60 (2010.01); H01L 33/10 (2010.01); H01L 33/20 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/20 (2013.01); H01L 33/46 (2013.01); H01L 2933/0083 (2013.01);
Abstract

A light-emitting device comprises a first conductive type semiconductor layer; a second conductive type semiconductor layer under the first conductive type semiconductor layer; an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a nonconductive semiconductor layer on the first conductive type semiconductor layer and including a light extraction structure formed in the nonconductive semiconductor layer; a recess disposed from the nonconductive semiconductor layer to an upper portion of the first conductive type semiconductor layer; a first electrode layer on the upper portion of the first conductive type semiconductor layer; a second electrode layer under the second conductive type semiconductor layer.


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