The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Feb. 06, 2015
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Masato Aoki, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
The present techniques provide a method for producing a Group III nitride semiconductor light-emitting device, with suppression of an increase in polarity inversion defect density. The production method includes an n-type semiconductor layer formation step, a light-emitting layer formation step, and a p-type semiconductor layer formation step. The p-type semiconductor layer formation step includes a p-type cladding layer formation step. The p-type cladding layer formation step includes a first p-type semiconductor layer formation step for forming a p-type AlGaN layer, a first semiconductor layer growth intermission step after the first p-type semiconductor layer formation step, and a p-type InGaN layer formation step after the first semiconductor layer growth intermission step. In the first semiconductor layer growth intermission step, a mixture of nitrogen gas and hydrogen gas is supplied to the substrate.