The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jan. 22, 2015
Applicant:
Snaptrack, Inc., San Diego, CA (US);
Inventor:
Kenji Nomura, San Jose, CA (US);
Assignee:
SNAPTRACK, INC., San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G09G 5/00 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); G09G 3/20 (2006.01); G09G 3/34 (2006.01); H01L 21/02 (2006.01); H01L 21/477 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); G09G 3/2096 (2013.01); G09G 3/3466 (2013.01); H01L 21/0262 (2013.01); H01L 21/02565 (2013.01); H01L 21/477 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract
This disclosure provides p-type metal oxide semiconductor thin films that display good thin film transistor (TFT) characteristics. The p-type metal oxide thin films include ternary or higher order tin-based (Sn-based) p-type oxides such as Sn (II)-M-O oxides where M is a metal. In some implementations, M is a metal selected from the d block or the p block of the periodic table. The oxides disclosed herein exhibit p-type conduction and wide bandgaps. Also provided are TFTs including channels that include p-type oxide semiconductors, and methods of fabrication. In some implementations, the p-channel TFTs have low off-currents.