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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9647105 B1

PDFFull Text
Expired
Date of Patent:
May. 09, 2017

Filed:

Oct. 10, 2014

Semiconductor device and method of manufacturing the same

Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventor:

Naoko Kurahashi, Isehara, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:

Kratz, Quintos & Hanson, LLP

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Moin Rahman

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/332 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/42316 (2013.01); H01L 29/42364 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66462 (2013.01); H01L 29/2003 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/4903 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device includes: a substrate; nitride semiconductor layers disposed over the substrate; a source electrode and a drain electrode disposed over the nitride semiconductor layers; a first insulating layer disposed over the nitride semiconductor layers, the source electrode and the drain electrode; a second insulating layer disposed over the first insulating layer; a first opening disposed in the second insulating layer and the first insulating layer and between the source electrode and the drain electrode, a portion of the nitride semiconductor layer being exposed in the first opening; a second opening disposed in the second insulating layer and between the source electrode and the drain electrode, a portion of the first insulating layer being exposed in the second opening; and a gate electrode disposed over the second insulating layer to bury the first opening and at least a portion of the second opening.

Find Patent Forward Citations

Kurahashi, Naoko. (2017). Semiconductor device and method of manufacturing the same (U.S. Patent No. 9647105). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9647105

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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