The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Mar. 09, 2016
Applicants:
Epistar Corporation, Hsinchu, TW;
Huga Optotech Inc., Taichung, TW;
Inventors:
Heng-Kuang Lin, Taichung, TW;
Chien-Kai Tung, Taichung, TW;
Assignee:
Epistar Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/22 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7785 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/22 (2013.01); H01L 29/267 (2013.01); H01L 29/7783 (2013.01); H01L 29/7787 (2013.01);
Abstract
A field effect transistor includes a substrate; a first semiconductor layer, disposed over the substrate; a second semiconductor layer, disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas; a p+ III-V semiconductor layer, disposed over the second semiconductor layer; and a depolarization layer, disposed between the second semiconductor layer and the p+ III-V semiconductor layer, wherein the depolarization layer includes a metal oxide layer.