The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jul. 09, 2014
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/324 (2006.01); H01L 21/78 (2006.01); H01L 21/3065 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 21/02164 (2013.01); H01L 21/0475 (2013.01); H01L 21/3065 (2013.01); H01L 21/324 (2013.01); H01L 21/78 (2013.01); H01L 29/0661 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01);
Abstract
A method for manufacturing a silicon carbide semiconductor device includes steps of preparing a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface, forming a groove portion in the first main surface of the silicon carbide substrate, and cutting the silicon carbide substrate at the groove portion. The step of forming the groove portion includes a step of thermally etching the silicon carbide substrate using chlorine. Thereby, a method for manufacturing a silicon carbide semiconductor device capable of suppressing damage to a chip is provided.