The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Oct. 10, 2014
Applicant:
Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;
Inventors:
Assignee:
JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 21/28 (2006.01); H01L 21/322 (2006.01); H01L 21/324 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 21/28255 (2013.01); H01L 21/322 (2013.01); H01L 21/324 (2013.01); H01L 21/3247 (2013.01); H01L 29/16 (2013.01); H01L 29/78 (2013.01); H01L 29/517 (2013.01);
Abstract
A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layerwith an oxygen concentration of 1×10cmor greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layerhaving an oxygen concentration of 1×10cmor greater in a reducing gas atmosphere so that the oxygen concentration decreases.
Toriumi, Akira. (2017). Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated (U.S. Patent No. 9647074). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9647074
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile