The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Feb. 04, 2015
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Makoto Kiyama, Itami, JP;

Takashi Matsuura, Itami, JP;

Mitsuru Shimazu, Itami, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/36 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/36 (2013.01); H01L 29/402 (2013.01); H01L 29/6606 (2013.01); H01L 29/872 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract

A diode having excellent switching characteristics is provided. A diode includes a silicon carbide substrate, a stop layer, a drift layer, a guard ring, a Schottky electrode, an ohmic electrode, and a surface protecting film. At a measurement temperature of 25° C., a product R•Q of a forward ON resistance R of the diode and response charges Q of the diode satisfies relation of R•Q≦0.24×V. The ON resistance R is found from forward current-voltage characteristics of the diode. A reverse blocking voltage Vis defined as a reverse voltage which produces breakdown of the diode. The response charges Q are found by integrating a capacitance (C) obtained in reverse capacitance-voltage characteristics of the diode in a range from 0 V to V.


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