The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Dec. 10, 2015
Hye Min Shin, Suwon-si, KR;
Jun Ho Park, Suwon-si, KR;
Dae Eun Jeong, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
Methods of manufacturing a magnetic memory device including forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction (MTJ) pattern by patterning the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a first insulating layer exposing an upper surface of the MTJ pattern, forming a polymer pattern on the exposed upper surface of the MTJ pattern, forming a second insulating layer exposing an upper surface of the polymer pattern, removing the polymer pattern to form a cavity in the second insulating layer, the cavity exposing the upper surface of the MTJ pattern, and forming a metal line by filling the cavity with a conductive metal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile