The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Dec. 08, 2014
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Kazufumi Watanabe, Tokyo, JP;
Yasushi Maruyama, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/359 (2011.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14645 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H04N 5/359 (2013.01); H01L 21/7806 (2013.01); H01L 27/14632 (2013.01); H01L 27/14687 (2013.01); H01L 31/02162 (2013.01); H01L 31/1804 (2013.01); Y02P 70/521 (2015.11);
Abstract
A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.