Tft and manufacturing method thereof, array substrate and manufacturing method thereof, x-ray detector and display device

Abstract

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film ('), a semiconductor-layer thin film (′) and a passivation-shielding-layer thin film (′) successively; forming a pattern (′) that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (′); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (′) and a drain electrode (′). The source electrode (′) and the drain electrode (′) are disposed on two sides of the active layer (′) respectively and in a same layer as the active layer (′). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.