The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jun. 10, 2016
Sandisk Technologies Llc, Plano, TX (US);
Sateesh Koka, Milpitas, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Yanli Zhang, San Jose, CA (US);
Senaka Kanakamedala, Milpitas, CA (US);
Rahul Sharangpani, Fremont, CA (US);
Yao-Sheng Lee, Tampa, FL (US);
George Matamis, Danville, CA (US);
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
Methods of making monolithic three-dimensional memory devices include performing a first etch to form a memory opening and a second etch using a different etching process to remove a damaged portion of the semiconductor substrate from the bottom of the memory opening. A single crystal semiconductor material is formed over the substrate in the memory opening using an epitaxial growth process. Additional embodiments include improving the quality of the interface between the semiconductor channel material and the underlying semiconductor layers in the memory opening which may be damaged by the bottom opening etch, including forming single crystal semiconductor channel material by epitaxial growth from the bottom surface of the memory opening and/or oxidizing surfaces exposed to the bottom opening etch and removing the oxidized surfaces prior to forming the channel material. Monolithic three-dimensional memory devices formed by the embodiment methods are also disclosed.