The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jul. 23, 2015
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Manoj Kumar, Jharkhand, IN;
Pei-Heng Hung, New Taipei, TW;
Hsiung-Shih Chang, Taichung, TW;
Chia-Hao Lee, New Taipei, TW;
Jui-Chun Chang, Hsinchu, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
The invention provides a semiconductor device. The semiconductor device includes a buried oxide layer disposed on a substrate. A semiconductor layer having a first conduction type is disposed on the buried oxide layer. A first well doped region having a second conduction type is disposed in the semiconductor layer. A cathode doped region having the second conduction type is disposed in the first well doped region. A first anode doped region having the first conduction type is disposed in the first well doped region, separated from the cathode doped region. A first distance from a bottom boundary of the first anode doped region to a top surface of the semiconductor layer is greater than a second distance from the bottom boundary to an interface between the semiconductor layer and the buried oxide layer.