The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Feb. 17, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sanghoon Baek, Seoul, KR;

Jung-Ho Do, Yongin-si, KR;

Taejoong Song, Seongnam-si, KR;

Giyoung Yang, Seoul, KR;

Seungyoung Lee, Incheon, KR;

Jinyoung Lim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 27/11 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/088 (2013.01); H01L 27/1104 (2013.01);
Abstract

A system-on-chip device may include a substrate with an active pattern, a gate electrode crossing the active pattern and extending in a first direction, and a first metal layer electrically connected to the active pattern and the gate electrode. The first metal layer may include a first metal line extending in the first direction and a second metal line spaced apart from the first metal line in the first direction to extend in a second direction crossing the first direction. The first and second metal lines may include first and second sidewalls parallel to the second direction, the first and second sidewalls may face each other, and the first sidewall may have a length that is two or three times a minimum line width.


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