The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Dec. 10, 2013
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Richard D. Moyers, Mesa, AZ (US);
Sudhama C. Shastri, Phoenix, AZ (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/94 (2013.01); H01L 21/3065 (2013.01); H01L 21/78 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/02126 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/11019 (2013.01); H01L 2224/1191 (2013.01); H01L 2224/13013 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13562 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/81805 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/94 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/20106 (2013.01); H01L 2924/20107 (2013.01); H01L 2924/20108 (2013.01);
Abstract
In one embodiment, a conductor bump is formed on an under bump conductor of a semiconductor device to extend a first distance away from a surface of the under bump conductor including forming a protective layer on an outer surface of the conductor bump wherein the plurality of semiconductor dies are subsequently singulated by etching through the semiconductor substrate with an etchant and wherein the protective layer protects the conductor bump from the etchant.