The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Mar. 10, 2016
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Tatsuro Saito, Yokkaichi Mie, JP;
Atsunobu Isobayashi, Yokkaichi Mie, JP;
Akihiro Kajita, Yokkaichi Mie, JP;
Tadashi Sakai, Yokohama Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a first insulating layer on an underlying layer, a first trench formed in the first insulating layer, and a first graphene layer provided in the first trench. The first trench comprises a bottom surface on the underlying and two side surfaces joined to the bottom surface, formed into a U-shape. The first graphene layer has a stacked structure including a plurality of graphene sheets. The plurality of graphene sheets each include a depression in a central portion. Portions of the graphene sheets located in an edge of the first graphene layer are each extended upward, which is in a direction opposite to the bottom surface.