The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Jun. 13, 2013
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Hsueh-Chung Chen, Cohoes, NY (US);

Chiahsun Tseng, Wynantskill, NY (US);

Chun-Chen Yeh, Clifton Park, NY (US);

Ailian Zhao, Slingerlands, NY (US);

Assignee:

GLOBALFOUNDRIES, INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 21/76888 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A wafer chip and a method of designing the chip is disclosed. A first fuse is formed having a first critical dimension and a second fuse having a second critical dimension are formed in a layer of the chip. A voltage may be applied to burn out at least one of the first fuse and the second fuse. The first critical dimension of the first fuse may result from applying a first mask to the layer and applying light having a first property to the mask. The second critical dimension of the second fuse may result from applying a second mask to the layer and applying light having a second property to the mask.


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