The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jan. 26, 2015
Jung-gil Yang, Suwon-si, KR;
Tae-yong Kwon, Suwon-si, KR;
Xingui Zhang, Suwon-si, KR;
Sang-su Kim, Yongin-si, KR;
Jung-gil Yang, Suwon-si, KR;
Tae-yong Kwon, Suwon-si, KR;
Xingui Zhang, Suwon-si, KR;
Sang-su Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments relate to a metal-oxide semiconductor field effect transistor (MOSFET) of a high performance operating with a necessary threshold voltage while including a channel region formed based on a group III-V compound, and a method of manufacturing the MOSFET. The MOSFET includes a substrate, a semiconductor layer including a group III-V compound on the substrate, and a gate structure disposed on the semiconductor layer, and including a gate electrode formed based on metal and undergone an ion implantation process.