The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jan. 14, 2016
Applicant:
Sandisk 3d Llc, Milpitas, CA (US);
Inventors:
Seje Takaki, Yokkaichi, JP;
Teruyuki Mine, Yokkaichi, JP;
Assignee:
SanDisk Technologies LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/115 (2017.01); H01L 21/28 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 27/115 (2013.01); H01L 21/283 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01);
Abstract
A method is provided for forming a monolithic three-dimensional memory array. The method includes forming a first vertically-oriented polysilicon pillar above a substrate, the first vertically-oriented polysilicon pillar surrounded by a dielectric material, removing the first vertically-oriented polysilicon pillar to form a first void in the dielectric material, and filling the first void with a conductive material to form a first via.