The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jun. 11, 2014
Applicant:
Hrl Laboratories, Llc, Malibu, CA (US);
Inventors:
Mary Y. Chen, Oak Park, CA (US);
Rongming Chu, Agoura Hils, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/00 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28575 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 29/2003 (2013.01); H01L 29/452 (2013.01); H01L 29/7786 (2013.01);
Abstract
A method of forming an Ohmic contact including forming a Ta layer in a contact area of a barrier, forming a Ti layer on the first Ta layer, and forming an Al layer on the Ti layer, wherein the barrier layer comprises AlGaN having a 10% to 40% Al composition and a thickness in a range between 30 Å to 100 Å, and wherein the barrier layer is on a channel layer comprising GaN.