The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Mar. 14, 2013
Applicant:

The Trustees of Columbia University IN the City of New York, New York, NY (US);

Inventor:

James S. Im, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); B23K 26/00 (2014.01); B23K 26/08 (2014.01); H01L 21/268 (2006.01); H01L 21/67 (2006.01); H01L 21/70 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02686 (2013.01); B23K 26/0081 (2013.01); B23K 26/083 (2013.01); H01L 21/0268 (2013.01); H01L 21/02691 (2013.01); H01L 21/268 (2013.01); H01L 21/67115 (2013.01); H01L 21/707 (2013.01); H01L 27/1285 (2013.01); H01L 27/1296 (2013.01); H01L 29/04 (2013.01); H01L 29/66765 (2013.01); H01L 29/78678 (2013.01); B23K 2201/40 (2013.01); H01L 21/02532 (2013.01);
Abstract

The present disclosure relates to a new generation of laser-crystallization approaches that can crystallize Si films for large displays at drastically increased effective crystallization rates. The particular scheme presented in this aspect of the disclosure is referred to as the advanced excimer-laser annealing (AELA) method, and it can be readily configured for manufacturing large OLED TVs using various available and proven technical components. As in ELA, it is mostly a partial-/near-complete-melting-regime-based crystallization approach that can, however, eventually achieve greater than one order of magnitude increase in the effective rate of crystallization than that of the conventional ELA technique utilizing the same laser source.


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