The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Aug. 23, 2012
Applicants:
Arpan Chakraborty, Goleta, CA (US);
Anurag Tyagi, Fremont, CA (US);
Inventors:
Arpan Chakraborty, Goleta, CA (US);
Anurag Tyagi, Fremont, CA (US);
Assignee:
Soraa, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 33/0075 (2013.01);
Abstract
Disclosed is a method for processing GaN based substrate material for manufacturing light-emitting diodes, lasers, and other types of devices. In various embodiments, a GaN substrate is exposed to nitrogen and hydrogen at a high temperature. This process causes the surface of the GaN substrate to anneal and become smooth. Then other processes, such as growing epitaxial layers over the surface of GaN substrate, can be performed over the smooth surface of the GaN substrate.