The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Jul. 18, 2012
Applicants:

Christophe Figuet, Crolles, FR;

Christophe Gourdel, Saint Maximin, FR;

Inventors:

Christophe Figuet, Crolles, FR;

Christophe Gourdel, Saint Maximin, FR;

Assignee:

SOITEC, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/263 (2006.01); H01L 21/304 (2006.01); H01L 21/3105 (2006.01); H01L 23/00 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02345 (2013.01); H01L 21/263 (2013.01); H01L 21/304 (2013.01); H01L 21/3105 (2013.01); H01L 21/76254 (2013.01); H01L 23/564 (2013.01); H01L 29/0657 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The invention relates to a method for fabricating a composite structure comprising a layer to be separated by irradiation, the method comprising the formation of a stack containing: a support substrate formed from a material that is at least partially transparent at a determined wavelength; a layer to be separated; and a separation layer interposed between the support substrate and the layer to be separated, the separation layer being adapted to be separated by exfoliation under the action of radiation having a wavelength corresponding to the determined wavelength. Furthermore, the method comprises, during the step for forming the composite structure, a treatment step modifying the optical properties in reflection at an interface between the support substrate and the separation layer or on an upper face of the support substrate.


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