The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Jun. 14, 2012
Applicants:

Beihai MA, Naperville, IL (US);

Uthamalingam Balachandran, Willowbrook, IL (US);

Shanshan Liu, Naperville, IL (US);

Inventors:

Beihai Ma, Naperville, IL (US);

Uthamalingam Balachandran, Willowbrook, IL (US);

Shanshan Liu, Naperville, IL (US);

Assignee:

UChicago Argonne, LLC, Chicago, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/008 (2006.01); H01G 4/10 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/008 (2013.01); H01G 4/10 (2013.01); H01G 4/12 (2013.01); H01G 4/1209 (2013.01); H01G 4/30 (2013.01); Y10T 29/435 (2015.01);
Abstract

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.


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