The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Mar. 15, 2016
Applicants:

Hyejeong SO, Seoul, KR;

Junjin Kong, Yongin-si, KR;

Changkyu Seol, Osan-si, KR;

Hong Rak Son, Anyang-si, KR;

Seonghyeog Choi, Hwaseong-si, KR;

Inventors:

Hyejeong So, Seoul, KR;

Junjin Kong, Yongin-si, KR;

Changkyu Seol, Osan-si, KR;

Hong Rak Son, Anyang-si, KR;

Seonghyeog Choi, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 29/52 (2006.01); H03M 13/27 (2006.01); H03M 13/29 (2006.01); H03M 13/00 (2006.01); G06F 11/10 (2006.01); G11C 16/04 (2006.01); G11C 29/02 (2006.01); G11C 29/42 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 11/1048 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/42 (2013.01); G11C 29/52 (2013.01); H03M 13/271 (2013.01); H03M 13/2707 (2013.01); H03M 13/2789 (2013.01); H03M 13/2909 (2013.01); H03M 13/6508 (2013.01); G11C 7/1006 (2013.01);
Abstract

An operating method is for a storage device that includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory. The operating method may include the memory controller receiving a read request from an external device, the memory controller adjusting a read scheme according to target data indicated by the read request among data of one page of the nonvolatile memory, and the memory controller reading the target data from the nonvolatile memory according to the adjusted read scheme.


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