The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Aug. 15, 2016
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jong-Sam Kim, Gyeonggi-do, KR;

Jae-Il Kim, Gyeonggi-do, KR;

Youk-Hee Kim, Gyeonggi-do, KR;

Jun-Gi Choi, Gyeonggi-do, KR;

Hee-Seong Kim, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 11/406 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 11/406 (2013.01); G11C 11/4091 (2013.01); G11C 16/10 (2013.01);
Abstract

A memory device includes a plurality of memory cells; a nonvolatile memory block suitable for simultaneously sensing one or more programmed weak addresses, and sequentially transmitting the sensed weak addresses; a weak address control block suitable for latching the weak addresses transmitted from the nonvolatile memory block, and outputting sequentially the latched weak addresses in a weak refresh operation; and a refresh control block suitable for controlling the memory cells corresponding to the counting address to be refreshed, in a normal refresh operation, and controlling the memory cells corresponding to the weak address to be refreshed, in the weak refresh operation.


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