The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Dec. 27, 2012
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Virginia Ch Spanoudaki, Cambridge, MA (US);
Craig Steven Levin, Palo Alto, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
A method for extracting photon depth-of-interaction of an incident photon in a crystal with a reflective coating optically coupled to all sides of the crystal, except for an opening, wherein a photodetector is optically coupled to the opening. A pulse shape of a photodetector output as a result of detection of scintillation photons from the crystal generated by the incident photon is measured, wherein the reflective coating optically coupled to all sides of the crystal, except for an opening optically coupled to the photodetector reflects the scintillation photons passing to all sides of the crystal, except for the opening optically coupled to the photodetector. The pulse shape is used to determine photon depth-of-interaction within the crystal.